Ml. Calzada et al., Rapid thermal processing of strontium bismuth tantalate ferroelectric thinfilms prepared by a novel chemical solution deposition method, J EUR CERAM, 21(10-11), 2001, pp. 1517-1520
Strontium bismuth tantalate (SBT) thin films have been deposited on Pt/TiO2
/(100)Si substrates by chemical solution deposition (CSD), using air-stable
solutions synthesised by a sol-gel method. Solutions with different Bi/Sr
ratios have been tested for the deposition of the films. These ratios and t
he type of thermal treatment used for the crystallisation of the films have
effect on the microstructure. Adequate ferroelectric responses have been m
easured in films with a Bi/Sr ratio of 2.75 and prepared with a direct ther
mal treatment that consists of a rapid thermal processing (RTP) at 650 degr
eesC with a heating rate of similar to 200 degreesC/s. A coercive field of
E(c)similar to 60 kV/cm and a remanent polarisation of P(r)similar to 11 mu
C/cm(2) have been measured in these films. They retain their P-r up to simi
lar to 10(5) s and they are fatigue-free up to similar to 10(10) cycles. (C
) 2001 Elsevier Science Ltd. All rights reserved.