Rapid thermal processing of strontium bismuth tantalate ferroelectric thinfilms prepared by a novel chemical solution deposition method

Citation
Ml. Calzada et al., Rapid thermal processing of strontium bismuth tantalate ferroelectric thinfilms prepared by a novel chemical solution deposition method, J EUR CERAM, 21(10-11), 2001, pp. 1517-1520
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
10-11
Year of publication
2001
Pages
1517 - 1520
Database
ISI
SICI code
0955-2219(2001)21:10-11<1517:RTPOSB>2.0.ZU;2-P
Abstract
Strontium bismuth tantalate (SBT) thin films have been deposited on Pt/TiO2 /(100)Si substrates by chemical solution deposition (CSD), using air-stable solutions synthesised by a sol-gel method. Solutions with different Bi/Sr ratios have been tested for the deposition of the films. These ratios and t he type of thermal treatment used for the crystallisation of the films have effect on the microstructure. Adequate ferroelectric responses have been m easured in films with a Bi/Sr ratio of 2.75 and prepared with a direct ther mal treatment that consists of a rapid thermal processing (RTP) at 650 degr eesC with a heating rate of similar to 200 degreesC/s. A coercive field of E(c)similar to 60 kV/cm and a remanent polarisation of P(r)similar to 11 mu C/cm(2) have been measured in these films. They retain their P-r up to simi lar to 10(5) s and they are fatigue-free up to similar to 10(10) cycles. (C ) 2001 Elsevier Science Ltd. All rights reserved.