The perovskite phase formation of 0.4Pb(Yb1/2Nb1/2)O-3-0.6PbTiO(3) thin films prepared on Pt/Ti electrode by reactive magnetron sputtering

Authors
Im, KV Choo, WK
Citation
Kv. Im et Wk. Choo, The perovskite phase formation of 0.4Pb(Yb1/2Nb1/2)O-3-0.6PbTiO(3) thin films prepared on Pt/Ti electrode by reactive magnetron sputtering, J EUR CERAM, 21(10-11), 2001, pp. 1553-1556
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
10-11
Year of publication
2001
Pages
1553 - 1556
Database
ISI
SICI code
0955-2219(2001)21:10-11<1553:TPPFO0>2.0.ZU;2-H
Abstract
Ferroelectric 0.4Pb(Yb1/2Nb1/2)O-3-0.6PbTiO(3) (PYNT) thin film was prepare d on Pt/Ti/SiO2/Si(100) substrates by multi-target rf magnetron sputtering deposition at substrate temperature of 550 degreesC. The YbNbO4 oxide targe t was used as Yb and Nb sources. The effect of composition and substrate wa s investigated by X-ray diffraction analysis. Although the formation of per ovskite phase mainly depends on the Pb sputtering power, the processing win dow is very narrow on Pt/Ti/SiO2/Si substrate. The substrates with the thic k Pt electrodes tend to reduce the perovskite phase. Meanwhile, the TiO2 bu ffer layer deposited on the Pt surface is observed to enhance the formation of the perovskite phase. (C) 2001 Published by Elsevier Science Ltd.