Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates

Citation
Hn. Lee et al., Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on SrTiO3 substrates, J EUR CERAM, 21(10-11), 2001, pp. 1565-1568
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
10-11
Year of publication
2001
Pages
1565 - 1568
Database
ISI
SICI code
0955-2219(2001)21:10-11<1565:EGONFS>2.0.ZU;2-U
Abstract
Non-c-axis-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with (116)- and ( 103)-orientations have been grown on Nb-doped (011)- and (111)-oriented SrT iO3 (STO) substrates by pulsed laser deposition, respectively. Analyses of the X-ray diffraction pole figures revealed that the three-dimensional epit axy orientation relationship SBT(001)parallel to STO(001); SBT[1 (1) over b ar0]parallel to STO[110] is valid for both cases of SBT thin films, irrespe ctive of STO orientations. The measured remanent polarizations (2P(r)) of ( 116)-oriented and (103)-oriented SBT films were 9.6 and 10.4 muC/cm(2), res pectively, for a maximum applied electric field of 320 kV/cm. The dielectri c constants of (116)- and (103)-oriented SBT were estimated as 155 and 189, respectively. (C) 2001 Elsevier Science Ltd. All rights reserved.