Preparation and properties of Al1-xTixN solid solution thin films by multiple cathode sputtering

Authors
Maiwa, H Ichinose, N
Citation
H. Maiwa et N. Ichinose, Preparation and properties of Al1-xTixN solid solution thin films by multiple cathode sputtering, J EUR CERAM, 21(10-11), 2001, pp. 1573-1576
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
10-11
Year of publication
2001
Pages
1573 - 1576
Database
ISI
SICI code
0955-2219(2001)21:10-11<1573:PAPOAS>2.0.ZU;2-0
Abstract
Al1-xTixN solid solution thin films were deposited by reactive sputtering o f a multi-metal target. A wurtzite-type solid solution was obtained in x = 0-0.3, and an NaCl-type solid solution was obtained in x = 0.4-1.0. Optical and electrical properties varied with composition x. The binding energies of Ti2p, A12p and N1s from XPS spectra shifted remarkably between x=0.3 and 0.4. The improvement of the oxidation resistance of the Al substituted TiN films and aluminum-rich oxide formation near the film surface was observed by XPS depth profiles. (C) 2001 Elsevier Science Ltd. All rights reserved.