Piezoelectric effect in RF sputtered ferroelectric thin films

Thin ferroelectric films of BaTiO3, LiNbO3, and Pb(Zr0.53Ti0.45W0.01Cd0.01) O-3 have been grown on different substrates. Processing conditions for the thin film preparation by RF sputtering were optimised to assure the composi tion transfer between the target and the thin film. Structure of the films was investigated by X-ray diffraction. The basic dielectric and piezoelectr ic properties were studied and the processing-structure perfection-property relationships of oxide thin films have been revealed. The piezoelectric ch arge coefficient d(33) was determined. Self-induced polarisation. of the th in films as well as stress-induced polarisation ascribed to reversible disp lacement of 90 degrees domain walls was taken into account to explain exper imental results. (C) 2001 Elsevier Science Ltd. All rights reserved.