Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate

This paper discusses the effect of donors and acceptors on the electronic b and structure and defect properties of Ba0.7Sr0.3TiO3 film (BST). Based on X-Ray Photoelectron Spectroscopy (XPS) data and an extension of previous wo rk by Robertson and Chen (Robertson, J. and Chen, C. W., Schottky barrier h eights of tantalum oxide, barium strontium titanate, lead titanate, and str ontium bismuth tantalate. Appl. Phys. Lett., 1999, 74, 1168-1170), Schottky barrier heights are calculated for BST films in which La and Mn dopants ha ve been added (0.7%). The barrier height expression of Cowley and Sze (Cowl ey, A. M. and Sze, S. M., Journal of Applied Physics, 1965, 36, 3212) is di scussed with attention to the term neglected in their original paper. The e ffect of dopants on the oxygen vacancy concentration is also discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.