Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

Citation
S. Fujihara et al., Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films, J EUR CERAM, 21(10-11), 2001, pp. 2109-2112
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
10-11
Year of publication
2001
Pages
2109 - 2112
Database
ISI
SICI code
0955-2219(2001)21:10-11<2109:EOLAMD>2.0.ZU;2-R
Abstract
Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel met hod, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500 degreesC for 30 min in flowing oxygen. The ZnO crystallite size inc reased by doping and the surface of the films became rougher. The current d ensity of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping) . The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the low est current density of 1.7 x 10(-6) A cm(-2) in the present study. (C) 2001 Elsevier Science Ltd. All rights reserved.