Formation and characteristics of fluorinated amorphous carbon films deposited by CF4/CH4 ICPCVD

Fluorinated amorphous carbon thin films were deposited on a p-type Si(100) substrate using a mixture of carbon tetrafluoride (CF4) and methane (CH4) g ases and an inductively coupled plasma chemical vapor deposition (ICPCVD). Fourier transform infrared and X-ray photoelectron spectroscopy spectra sho w that the film has C-F, C-F-2, C-F-3, C-CFx, and C-C bonds. Also, the diel ectric constant may be decreased greatly due to the C-F bond in the film. I t is found that the C-F bonding configuration changes from a C-F bond to C- CFx and C-F-3 bonds as a function of the CF4/CH4 flow rate ratio. Therefore , a reduction of the dielectric constant can be obtained by varying the C-C F, bonding configuration as well as by incorporating fluorine. The relative dielectric constant, the leakage current density, and the dielectric break down field of as-deposited film with a CF4/CH4 flow rate ratio of 7 at a 20 0mTorr working pressure and an 800W rf power are about 2.4, 7 x 10(-12) A/c m(2). and above 15 MV/cm, respectively.