Progressive disappearance of the c-axis tunneling barrier in Bi2Sr2CaCu2O8+x single crystals near T-c

Citation
Hs. Chang et al., Progressive disappearance of the c-axis tunneling barrier in Bi2Sr2CaCu2O8+x single crystals near T-c, J KOR PHYS, 39(2), 2001, pp. 344-349
Citations number
31
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
03744884 → ACNP
Volume
39
Issue
2
Year of publication
2001
Pages
344 - 349
Database
ISI
SICI code
0374-4884(200108)39:2<344:PDOTCT>2.0.ZU;2-H
Abstract
We observed an enhancement of the differential conductance dI/dV around the zero bias in junctions of Au/Bi2Sr2CaCu2O8+x(Bi2212) single crystals near the superconducting transition temperature of Bi2212 crystals with the tunn eling current along the c axis. We attribute such an enhancement to an Andr eev reflection (AR) between the surface Cu-O bilayer, which is in the norma l state, and the next superconducting bilayer below the crystal surface. Th e continuous evolution from a gap-like depression to the AR peak structure of the dI/dV curves around the zero bias indicates weakening of the barrier strength of the non-superconducting layers between adjacent Cu-O bilayers as the temperature is raised up to T-c. We suggest that the fact can be con veniently used to investigate the possible existence of preformed pairs in the pseudogap state above T-c.