Preparation and properties of Bi2Ti2O7 thin films by chemical solution deposition

Homogeneous and crack-free Bi2Ti2O7 thin films with strong (111) orientatio n were successfully prepared on n-type Si (100) substrates by chemical solu tion deposition. Bismuth nitrate and titanium butoxide were used as startin g materials. The crystallization temperature is relatively low and about 50 0 degreesC. The insulating and dielectric properties were found to be depen dent on the annealing temperature. The dielectric constant was 115.5 at 100 kHz at room temperature, and the leakage current density was 3.48 X 10(-7) A/cm(2) at an applied voltage of 15 V (375 kV/cm) for 0.4 mum-thick films annealed at 500 degreesC for 30 min. (C) 2001 Elsevier Science Ltd. All rig hts reserved.