Modelling of ideal AlGaAs quantum well solar cells

A theoretical model has been developed to determine the influence of the in sertion of multi-quantum wells (MQW) over the conversion efficiencies of Al xGa1-xAs solar cells. Open-circuit voltages, short-circuit current densitie s, J-V curves and conversion efficiencies have been calculated as functions of the well and barrier band gaps, width and depth of the wells, number of wells in the intrinsic region and the recombination rate in the interfaces . Particular emphasis is placed on the calculation of the photon absorption in AlxGa1-xAs quantum wells. These results are matched with identical p-i- n solar cells without quantum wells. The outcomes of the model show that th e insertion of MQW into the depletion region of a p-i(MQW)-n AlxGa1-xAs sol ar cell can significantly enhance the conversion efficiencies. We demonstra ted that for determined values of the studied parameters, the conversion ef ficiencies of the quantum well solar cell are higher than that of the corre sponding cell without quantum wells. (C) 2001 Published by Elsevier Science Ltd.