A dual-channel IEGT

Authors
Huang, S Amaratunga, GAJ Udrea, F Sheng, K Waind, P Coulbeck, L Taylor, P
Citation
S. Huang et al., A dual-channel IEGT, MICROELEC J, 32(9), 2001, pp. 755-761
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
32
Issue
9
Year of publication
2001
Pages
755 - 761
Database
ISI
SICI code
0026-2692(200109)32:9<755:ADI>2.0.ZU;2-9
Abstract
A Dual Channel Injection Enhanced Gate Transistor (DC-IEGT) device structur e which allows for an additional p-channel to collect holes during turn-off is proposed and analysed in detail by extensive two-dimensional simulation s. The DC-IEGT shows overall superior performance over the conventional IEG T and IGBT and is characterised by low on-state voltage drop, fast switchin g and large SOA. (C) 2001 Elsevier Science Ltd. All rights reserved.