A method of measuring large-signal S-parameters of high power transistors

Authors
Park, SK Chang, KS Choi, YS Huh, JW Kim, Y
Citation
Sk. Park et al., A method of measuring large-signal S-parameters of high power transistors, MICROWAVE J, 44(8), 2001, pp. 122
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVE JOURNAL
ISSN journal
01926225 → ACNP
Volume
44
Issue
8
Year of publication
2001
Database
ISI
SICI code
0192-6225(200108)44:8<122:AMOMLS>2.0.ZU;2-G
Abstract
A measurement method for scattering parameters (S-parameters) of high power transistors is presented. The proposed method directly determines the S-pa rarneters of high power transistors by measuring overall gain, phase and S- pararneters of input and output matching network when the transistor is ope rating normally. Using this method the S-parameters I Of a small-signal amp lifier transistor Motorola MRF581, and a commercial high power transistor, Motorola MRF6402, are obtained.