Firing condition for entire reactions of fluorides with water vapor in metalorganic deposition method using trifluoro acetate

Citation
T. Araki et al., Firing condition for entire reactions of fluorides with water vapor in metalorganic deposition method using trifluoro acetate, PHYSICA C, 357, 2001, pp. 991-994
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
357
Year of publication
2001
Part
2
Pages
991 - 994
Database
ISI
SICI code
0921-4534(200108)357:<991:FCFERO>2.0.ZU;2-Q
Abstract
To obtain the YBa2Cu3O7, (YBCO) film on buffered metal tapes, we have to fi re films below 800 degreesC and avoid formation of BaF2 in the films which leads to low J(c) by metalorganic deposition using trifluoroacetate method. By estimating each process condition to reaction rate of fluorides with wa ter vapor in precursor, we can established firing profile for YBCO film on buffered metal substrate at 725 degreesC. With the profile, we can successf ully obtained YBCO film on CeO2/YSZ/hastelloy, which has critical current d ensity (J(c)) of 1.72 MA/cm(2) (77 K, 0 T) and thickness of 1860 Angstrom. (C) 2001 Elsevier Science B.V. All rights reserved.