Microstructure of (Hg,Re)-1212 grain boundary junctions grown on STO bicrystal substrates

Citation
Y. Wu et al., Microstructure of (Hg,Re)-1212 grain boundary junctions grown on STO bicrystal substrates, PHYSICA C, 357, 2001, pp. 1399-1402
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
357
Year of publication
2001
Part
2
Pages
1399 - 1402
Database
ISI
SICI code
0921-4534(200108)357:<1399:MO(GBJ>2.0.ZU;2-K
Abstract
Microstructure of Re-doped Hg-1212 thin film grain boundaries (GBs) fabrica ted by a two-step process on SrTiO3 bicrystal substrates with 45 degrees an d 24 degrees tilt angles has been examined by transmission electron microsc opy observation and compared with that of YBa2Cu3O7-delta. It was revealed that the GBs of the (Hg,Re)-1212 film are wavy with many facets, of which s ize is a few nanometers. Both symmetric and asymmetric facets are found in the 'symmetrically' tilted 24 degrees boundaries. Moreover, the facets in t he GBs are mainly asymmetric in the 45 degrees GB. There are some regions o n the GBs containing many precipitates, which may cause inhomogeneous junct ion transport properties. (C) 2001 Elsevier Science B.V. All rights reserve d.