Charge transport across 45 degrees asymmetrical grain boundary fabricated in YBa2Cu3O7-x films grown by the liquid phase epitaxy

Authors
Eltsev, Y Nakao, K Yamada, Y Hirabayashi, I Ishimaru, Y Tanabe, K Enomoto, Y Wen, JG Koshizuka, N
Citation
Y. Eltsev et al., Charge transport across 45 degrees asymmetrical grain boundary fabricated in YBa2Cu3O7-x films grown by the liquid phase epitaxy, PHYSICA C, 357, 2001, pp. 1572-1575
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
357
Year of publication
2001
Part
2
Pages
1572 - 1575
Database
ISI
SICI code
0921-4534(200108)357:<1572:CTA4DA>2.0.ZU;2-2
Abstract
We report on the electrical transport properties of 45 degrees asymmetrical grain boundaries (GB's) fabricated in YBa2Cu3O7-x films grown by the liqui d phase epitaxy (LPE). In total, about 15 samples have been studied, Simila r to previous results obtained on bicrystals grown by various physical depo sition (PVD) methods we found strong scattering of zero magnetic field crit ical current density. In striking contrast to PVD grown bicrystals selected LPE grown bicrystals demonstrate regular magnetic interference patterns su ggesting better quality of the GB in LPE bicrystals compared to PVD samples . (C) 2001 Elsevier Science B.V. All rights reserved.