Electrical resistivity for Bi2Sr1.6La0.4CuO6+delta in magnetic field and under quasi-hydro static pressure

We have measured electrical resistivity in a magnetic field and under quasi -hydro static pressure for single crystalline Bi2Sr1.6La0.4CuO6+delta in th e underdoped region. Temperature dependence of out-of-plane and in-plane el ectrical resistivity indicates that applying pressure increases carrier con centration in Bi2Sr1.6La0.4Cu6+delta Moreover, we have observed that the ma gnitude of the negative out-of-plane magnetoresistance decreases with incre asing pressure. This result suggests that applied pressure also enhances ch arge confinement in a CuO2 plane. (C) 2001 Elsevier Science B.V. All rights reserved.