BeO doping effect on the critical current density in Pb substituted Bi2212crystals

Authors
Sasakura, H Miura, O Ito, D
Citation
H. Sasakura et al., BeO doping effect on the critical current density in Pb substituted Bi2212crystals, PHYSICA C, 357, 2001, pp. 216-221
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
357
Year of publication
2001
Part
1
Pages
216 - 221
Database
ISI
SICI code
0921-4534(200108)357:<216:BDEOTC>2.0.ZU;2-L
Abstract
BeO doping effect on flux pinning properties in Bi(Pb)2212 crystals were st udied. Critical current densi0ties for BeO 10 vol% doped crystals in self-f ield increased all over temperature region in comparison with BeO-free crys tals. The second peak in magnetization curves was observed for BeO 2 vol% d oped crystal in the temperature region from 20 to 40 K. Irreversibility fie ld B-irr for the 2 vol% BeO doped crystals improved in the temperature 40-7 7 K. The theoretical value of power law of the B-irr to the temperature bas ed on the flux creep theory is in good agreement to the experimental value in the region 15-60 K. (C) 2001 Elsevier Science B.V. All rights reserved.