The origin of flux pinning is studied in NdBa2Cu3O7-delta single crystals g
rown by the flux method with varying O-2 partial pressure during the growth
and using different oxygen reduction schedules. The critical current densi
ty, J(c) is remarkably enhanced when O-2 defects are introduced in both cry
stals grown at low (0.03%) and intermediate (0.1%) O-2-partial pressure. Ho
wever, for excessive O-2 vacancies, both T-c and J(c) are decreased. Our re
sults demonstrate that oxygen vacancy clusters along with the substitutiona
l defects and twin boundaries play the major role in flux pinning. Our resu
lts also demonstrate that the first-order melting transition observed in a
clean system can transform into a glassy state with increasing defect densi
ty. (C) 2001 Elsevier Science B.V. All rights reserved.