What we have learned about intrinsic defects in silicon: A help in understanding diamond?

Authors
Watkins, GD
Citation
Gd. Watkins, What we have learned about intrinsic defects in silicon: A help in understanding diamond?, PHYS ST S-A, 186(2), 2001, pp. 167-176
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
186
Issue
2
Year of publication
2001
Pages
167 - 176
Database
ISI
SICI code
0031-8965(20010723)186:2<167:WWHLAI>2.0.ZU;2-H
Abstract
What we have established by electron paramagnetic resonance (EPR) studies i n silicon concerning the properties of its intrinsic defects (vacancies and interstitials) and their interactions with other defects is reviewed. The lessons learned are compared to what is currently being observed in diamond , and some general observations made. Also described is a recent identifica tion by EPR of a dominant electrically active defect involving a single hyd rogen atom in CVD diamond.