Influence of surface properties on the quantum photoyield of diamond photocathodes

Citation
Js. Foord et al., Influence of surface properties on the quantum photoyield of diamond photocathodes, PHYS ST S-A, 186(2), 2001, pp. 227-233
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
186
Issue
2
Year of publication
2001
Pages
227 - 233
Database
ISI
SICI code
0031-8965(20010723)186:2<227:IOSPOT>2.0.ZU;2-X
Abstract
The quantum efficiency and chemical stability of CVD diamond photocathodes has been examined. As-grown or microwave plasma hydrogenated boron-doped di amond films display a quantum photoyield of approximately 0.05% at 190 nm, which degrades gradually as the material is left in ambient atmosphere, due to slow oxidation. Rapid degradation in performance occurs when exposed to atomic or electronically excited oxygen. X-ray photoelectron spectroscopy shows that the yield drops close to zero at around monolayer oxygen coverag e. and that the main oxygen species on the surface is hydroxyl or isolated ether linkages.