Inhibition of light element diffusion in diamond due to ion implantation related defects

The effect that dopants and defects. related to the ion-implantation proces s or due to interlayer strain have on the diffusion of light elements H (D) . Li and B in diamond is studied. The depth profile of the implants is meas ured. by using SIMS, in different kinds of diamond substrates (undoped, dop ed, defect free, defect containing) before and after thermal annealing at v arious temperatures. Implantation related residual defects are suggested to inhibit, presumably by forming very stable immobile complexes, the diffusi on of the impurities studied. The D-defect complex breaks up abruptly at si milar to 1300 K. Ion implanted B does diffuse weakly at high temperatures ( T > 1300 K).