This work focuses on a sample of diamond thin film which was grown epitaxia
lly on polished {111} surface of synthetic type Ib diamond crystals. Phosph
orus doping was achieved during growth using phospine in the reactant gas (
[P]/[C] = 500 ppm. [P] = 3 x 10(18) cm(-3)). Hall effect measurements show
n-type conductivity and thermal activation energy of free electrons of 610
+/- 10 meV. The sample was characterised by Fourier Transformed Infrared (F
TIR) spectroscopy a 1.8 K under a magnetic field (0 to 13 Tesla) parallel t
o the It It I direction. The evolution of the 1S --> 2P(+/-) absorption pea
k shows an increase of the FWHM (full width at half maximum) proportionally
to the magnetic field. The results suggest a linear Zeeman splitting. For
a magnetic field of 13 T the absorption peak splits into 1S --> 2P(+) and 2
P(-). This splitting confirms the attribution of this peak to a transition
to the 2P(+/-) excited state of phosphorus. A value for the transverse effe
ctive mass of the electron m(t) = 0.31m(0) has been deduced from the splitt
ing.