Precision growth for the manufacture of semiconductor heterostructure devices

Authors
Hayden, RK Missous, M Kelly, MJ
Citation
Rk. Hayden et al., Precision growth for the manufacture of semiconductor heterostructure devices, SEMIC SCI T, 16(8), 2001, pp. 676-678
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
8
Year of publication
2001
Pages
676 - 678
Database
ISI
SICI code
0268-1242(200108)16:8<676:PGFTMO>2.0.ZU;2-W
Abstract
A simple method, using ex situ materials analysis for frequent re-calibrati on, achieves the precision and accuracy required for the growth of semicond uctor heterostructures for commercial device fabrication. Electrical charac teristics of tunnel devices from wafers grown months apart using this metho d have very little variation.