Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Authors
Usami, N Azuma, Y Ujihara, T Sazaki, G Nakajima, K Yakabe, Y Kondo, T Kawaguchi, K Koh, S Shiraki, Y Zhang, BP Segawa, Y Kodama, S
Citation
N. Usami et al., Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method, SEMIC SCI T, 16(8), 2001, pp. 699-703
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
8
Year of publication
2001
Pages
699 - 703
Database
ISI
SICI code
0268-1242(200108)16:8<699:MBEOGO>2.0.ZU;2-Q
Abstract
A detailed study of molecular beam epitaxy of GaAs on homemade SiGe substra tes has been performed. It was found that the initial migration-enhanced ep itaxy process with As prelayer is crucial to obtain high-quality GaAs. By ( 004) x-ray diffraction, the lattice mismatch between GaAs and SiGe was demo nstrated to be reduced compared with the conventional GaAs/Ge heterostructu re. Furthermore, narrower halfwidth of the rocking curve and stronger photo luminescence intensity were found for GaAs on SiGe. These results show that SiGe is a promising material as an alternative substrate to Ge to realize exact lattice matching to GaAs for solar cell applications.