Effect of post-oxidation annealing on the electrical properties and oxynitride films of deposited oxide on strained-Si0.82Ge0.18 layers

Silicon dioxide and oxynitride films have been deposited on strained-Si0.82 Ge0.18 layers at a low temperature using tetraethylorthosilicate (TEOS), TE OS/O-2 and TEOS/NO plasma. Effect of post-oxidation annealing (POA) time (a t 700 degreesC) on the electrical properties of the dielectrics have been s tudied. The border trap (Q(bt)) generation has been characterized using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. It has been observed that the interface trap charge density (D-it) and gate v oltage shift (DeltaV(G)) decrease with POA time. Under Fowler-Nordheim cons tant current stressing, the charge trapping behaviour and the amount of bor der trap charge density are found to be low in the case of TEOS/NO-plasma-d eposited oxynitride films compared with TEOS- and TEOS/O-2-plasma-deposited oxide films.