InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organicchemical vapour deposition

Authors
Yin, JZ Wang, XQ Yin, ZY Du, GT Yang, SR
Citation
Jz. Yin et al., InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organicchemical vapour deposition, SEMIC SCI T, 16(8), 2001, pp. 715-719
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
8
Year of publication
2001
Pages
715 - 719
Database
ISI
SICI code
0268-1242(200108)16:8<715:ISQDOG>2.0.ZU;2-6
Abstract
In this paper, a thin tensile GaAs interlayer was used to obtain a regular arrangement of InAs quantum dots on an InP substrate by low-pressure metal- organic chemical vapour deposition (LP-MOCVD). Photoluminescence (PL) spect ra, atomic force microscopy image and Raman spectra have been investigated. Some theoretical calculations in the PL and Raman spectra have been perfor med. The conclusions coincide well with our experiment results.