Preparation and characterization of CuInS2 thin films solar cells with large grain

The CuInS2 films with a maximum thickness of about 9 mum and a maximum atom ic Cu/In ratio (as-deposited precursor) of 3.0 were prepared, and, to preve nt peeling from substrate, were heat treated during Cu/In evaporation and/o r intercalated with very thin Pt or I'd (between Mo and CuInS2 layers). Thu s, we could prepare the films with very large grain. It is also worth notin g that the large grain films were easily optimized by chemical etching of t he films using a thick film and Cu-rich composition. Therefore, the absorbe r for high-efficiency solar cells can be prepared by varying over a wide ra nge of composition and thickness of precursor. The characterization of CuIn S2 absorbers with various film thickness and compositions were investigated and related with the performance of the photovoltaic device. (C) 2001 Else vier Science B.V. All rights reserved.