Improved photovoltaic method for measurement of minority carrier diffusionlength applied to silicon solar cells

Citation
J. Tousek et al., Improved photovoltaic method for measurement of minority carrier diffusionlength applied to silicon solar cells, SOL EN MAT, 69(3), 2001, pp. 297-302
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
69
Issue
3
Year of publication
2001
Pages
297 - 302
Database
ISI
SICI code
0927-0248(200110)69:3<297:IPMFMO>2.0.ZU;2-0
Abstract
The photovoltage spectrum measured on back illuminated silicon solar cells of the PESC (passivated emitor solar cell) type without original bottom ohm ic electrode is evaluated with the aim to find the diffusion length of mino rity carriers in bulk of the absorber (L). Two junctions, namely pn(+) junc tion of the cell and that spontaneously created on the free surface general ly exist in such samples. They give rise to two signals of opposite signs w ith one point of exact compensation. Six parameters (including L) are neede d to characterize the spectrum. Special simple arrangement removes influenc e of spontaneously created junction on the free surface, which, in this way , reduces the number of parameters needed for fitting to three and enhances reliability of the measurement. (C) 2001 Elsevier Science B.V. All rights reserved.