Indentation-induced domain switching in Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystal

Authors
Citation
Jk. Shang et X. Tan, Indentation-induced domain switching in Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystal, ACT MATER, 49(15), 2001, pp. 2993-2999
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
49
Issue
15
Year of publication
2001
Pages
2993 - 2999
Database
ISI
SICI code
1359-6454(20010903)49:15<2993:IDSIPC>2.0.ZU;2-R
Abstract
Response of ferroelectric domains to mechanical stresses was studied on a < 010 > oriented piezoelectric 0.65Pb(Mg1/3Nb2/3)O-3-0.35PbTiO(3) (0.65PMN-0 .35PT) crystal. Stress-induced domain switching was observed in the stress field of a microindentation and was confined to butterfly-shaped switching zones which extended preferentially along the < 101 > directions. Based on a critical shear stress criterion, a stress analysis was made to determine the condition for the 90 degrees domain switching. The analysis predicted a hyperbolic contour for the switching-zone boundary, in agreement with the experimental observations. (C) 2001 Acta Materialia Inc. Published by Elsev ier Science Ltd. All rights reserved.