Optical gain in Si/SiO2 lattice: Experimental evidence with nanosecond pulses

Experimental evidence of population inversion and amplified spontaneous emi ssion was found for Si nanocrystallites embedded in SiO2 surrounding under pumping with 5 ns light pulses at 380, 400, and 500 nm. As an important pro perty, our experiments show a short lifetime of the population inversion al lowing a generation of short (a few nanosecond) amplified light pulses in t he Si/SiO2 lattice. The estimate for optical gain in the present samples is 6 cm(-1) at 720 nm. (C) 2001 American Institute of Physics.