Study of exciton-longitudinal optical phonon coupling in quantum wells foroptoelectronic applications

Authors
Citation
Wz. Shen, Study of exciton-longitudinal optical phonon coupling in quantum wells foroptoelectronic applications, APPL PHYS L, 79(9), 2001, pp. 1285-1287
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1285 - 1287
Database
ISI
SICI code
0003-6951(20010827)79:9<1285:SOEOPC>2.0.ZU;2-J
Abstract
The study of exciton-longitudinal optical (LO) phonon coupling in semicondu ctor quantum well (QW) structures and their corresponding bulk materials re veals four distinct features: a large difference between (i) III-V and II-V I QW structures, (ii) multiple QW and single QW structures, as well as (iii ) QW structures and their corresponding bulk materials, and its linear depe ndence on well width in QW structures. A quantitatively theoretical approac h is presented, which can explain well all the experimental observations an d can clarify the controversy in the literature. The effects of alloy disor der and strain in QW structures on exciton-LO phonon coupling are also disc ussed. (C) 2001 American Institute of Physics.