Effect of surface roughness on field emission from chemical vapor deposited polycrystalline diamond

Citation
N. Koenigsfeld et al., Effect of surface roughness on field emission from chemical vapor deposited polycrystalline diamond, APPL PHYS L, 79(9), 2001, pp. 1288-1290
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
9
Year of publication
2001
Pages
1288 - 1290
Database
ISI
SICI code
0003-6951(20010827)79:9<1288:EOSROF>2.0.ZU;2-#
Abstract
The effect of surface roughness on electron emission from hydrogenated poly crystalline diamond films is reported. Field emission measurements were per formed with both millimeter and nanometer spatial resolution using scanning probe techniques. Surface asperities were removed by ion beam treatment, w hich resulted in a reduction of the rms roughness from 198 to 94 nm, leadin g to an increase in the threshold field required for electron emission by a bout a factor of 2. These results suggest that surface asperities, rather t han grain boundaries, are the dominant influence on electron emission in po lycrystalline diamond films. (C) 2001 American Institute of Physics.