Depth dependence of {311} defect dissolution

A deep band of {311} defects was created 520 nm below the silicon surface w ith a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 degreesC, 1000 s). Chemical etching was used to vary the depth to the surface of the {311}-defect band. Afterwards, the defect dissolution was i nvestigated at 750 degreesC for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster dis tribution is changed. The {311} defects were analyzed by plan-view, transmi ssion electron microscopy. We show that the dissolution time of the {311}-d efect band varies linearly with depth, confirming that surface recombinatio n controls the dissolution and is consistent with analogous observations of transient enhanced diffusion. (C) 2001 American Institute of Physics.