Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling

Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor-semiconductor-superconductor double-Schottky-junctio n structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semicon ductor. The electron-phonon coupling is measured for the SOI film and the l ow value of the coupling is shown to be the origin of the observed signific ant cooling effect. (C) 2001 American Institute of Physics.