HE-INDUCED DAMAGE OF SILICON-CARBIDE STUDIED BY VIBRATIONAL SPECTROSCOPY( BEAM)

Authors
HOBERT H DUNKEN H SEIFERT E MENZEL R BACHMANN T WESCH W
Citation
H. Hobert et al., HE-INDUCED DAMAGE OF SILICON-CARBIDE STUDIED BY VIBRATIONAL SPECTROSCOPY( BEAM), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 129(2), 1997, pp. 244-249
Citations number
6
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
129
Issue
2
Year of publication
1997
Pages
244 - 249
Database
ISI
SICI code
0168-583X(1997)129:2<244:HDOSSB>2.0.ZU;2-9
Abstract
The damaging of 6H-SiC by He+ ions with 700 and 1400 keV and doses bet ween 0.5 and 24 x 10(14) ions cm(-2) was studied by IR and Raman spect roscopy. Optical modelling of the IR spectra indicates the formation o f two layers: a light absorbing surface layer of disturbed crystalline material with a thickness of 1.6 and 3.1 mu m, respectively, and an i nterface layer with a thickness of 0.3 mu m and a dose-proportional in crease of the refractive index. Raman spectra show a special kind of l attice distortions and decrease of the sharp bands of the crystalline bulk carbide, which is proportional to the ion dose also and is caused by the diminished transparency of the surface layers.