PREPARATION AND PROPERTIES OF YTTRIUM-MODIFIED LEAD-ZIRCONATE-TITANATE FERROELECTRIC THIN-FILMS

Yttrium-modified Pb(Zr,Ti)O-3(PYZT) ferroelectric thin films have been prepared by the sol-gel technique. The annealing temperature and time of the thin films are 600-700 degrees C for 1-10 min in 100% O-2 atmo sphere. The influence of the yttrium contents on the ferroelectric pro perties of PZT thin films has been studied. Experimental results show that PZT ferroelectric thin films doped with yttrium have a large rema nent polarization P-r, small coercive field E-c, small leakage current , good fatigue endurance and lower annealing temperature than the undo ped PZT thin films. 2.5 mol% Y is adequate to obtain better ferroelect ric properties. The values of P-r and E-c of (Pb0.975Y0.025)(Zr0.53Ti0 .47)O-3 thin films are 30 mu C cm(-2) and 40 kV cm(-1) at 1 kHz, respe ctively.