Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics

Authors
Gordon, RG Becker, J Hausmann, D Suh, S
Citation
Rg. Gordon et al., Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics, CHEM MATER, 13(8), 2001, pp. 2463-2464
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
13
Issue
8
Year of publication
2001
Pages
2463 - 2464
Database
ISI
SICI code
0897-4756(200108)13:8<2463:VDOMOA>2.0.ZU;2-C