Transport properties of mu c-Si : H films prepared by very high hydrogen-diluted silane plasma

Highly hydrogen-diluted silane plasma is used to fabricate microcrystalline silicon films in a plasma-enhanced chemical vapour deposition system. X-ra y diffraction and micro-Raman scattering spectroscopy are utilized to chara cterize their microstructure properties. Dark conductivity and drift mobili ty are measured by the travelling wave method. With the decreasing gas flow ratio of silane-to-hydrogen from 2% to 0.2%, the crystalline volume fracti on and the drift mobility increase at room temperature. Meanwhile, the dark conductivity increases initially and then decreases. The relationship betw een the microstructures and transport properties is discussed.