Electrical properties of the ZnO/Si heterostructure

Authors
Liu, CH Chen, YL Lin, BX Zhu, JJ Fu, ZX Peng, C Yang, Z
Citation
Ch. Liu et al., Electrical properties of the ZnO/Si heterostructure, CHIN PHYS L, 18(8), 2001, pp. 1108-1110
Citations number
8
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
18
Issue
8
Year of publication
2001
Pages
1108 - 1110
Database
ISI
SICI code
0256-307X(200108)18:8<1108:EPOTZH>2.0.ZU;2-D
Abstract
The electrical properties of a type of semiconductor heterostructure fabric ated by depositing zinc oxide film on a silicon substrate are investigated. The I - V, I - T curves, and deep level transient spectra are measured. Fr om these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.