Field emission from nanostructured carbon films on Si tips

Nanostructured carbon thin films on Si tips were prepared by hot filament c hemical vapour deposition at different substrate temperatures. The Si tips and films were obtained under various deposition conditions in the same rea ction chamber. It was found that the field emission properties from graphit e-like nanostructured carbon on Si tips were greatly improved, compared wit h those of nanodiamond films on Si tips. A turn-on field of 1.2 V(.)cm(-1) was observed for high sp(2) content thin films on Si tips. The analysis sho wed that the field emission enhancement effect was caused by the tip geomet ry, tunnel effect and sp(2) content in the films. However, the geometrical enhancement was greater than that of the tunnel and sp(2) content effects.