Field effect transistor with self-organized In0.15Ga0.85As/GaAs quantum wires as a channel grown on (553)B GaAs substrates

A functional field effect transistor with self-organized In0.15Ga0.85As/GaA s quantum wires (QWRs) as a channel was achieved by molecular beam epitaxy on a (553)B GaAs substrate. Both the three-dimensional image of atomic forc e microscopy and the polarization of the photoluminance peaks reveal that t he channel of the device is a self-organized QWR structure. The device with a gate length of 2 mum and a source-drain spacing of 5 mum performed a goo d enhancement-mode characteristic and a maximum transconductance of 65 mS/m m was obtained at the gate voltage of 1.0 V by the geometric gate width at room temperature. The saturated drain current is as high as 5.6 mA. The dev ice exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer. In addition, the effective gate width was discussed in comparison with the geometric gate width of the devi ce, from which a larger maximum transconductance of 130 mS/mm could be esti mated.