H. Eda et al., Development of single step grinding system for large scale phi 300 Si wafer: A total integrated fixed-abrasive solution, CIRP ANN-M, 50(1), 2001, pp. 225-228
Citations number
6
Categorie Soggetti
Mechanical Engineering
Journal title
CIRP ANNALS-MANUFACTURING TECHNOLOGY
Volume
50
Issue
1
Year of publication
2001
Pages
225 - 228
Database
ISI
SICI code
Abstract
This research has developed an integrated manufacturing system for phi 300m
m silicon wafer, using fixed abrasive instead of conventional free slurry,
to provide a totally integrated solution for achieving the surface roughnes
s R-a < 1nm (R-y < 5 similar to 6nm) and the global flatness < 0.2 mum/phi
300mm. In addition to the space saving, this integrated system also signifi
cantly reduces the total energy consumption by 70%, compared with the curre
nt process used for phi 200mm Si wafer. Three core technologies: the hybrid
process mechanics, the GMM (giant magnetostrictive material) actuated posi
tioning/alignment device and the ecologically friendly coolant circulation
system are described in this paper. The system performance and results are
then presented and discussed.