TECHNIQUE PROVIDES BURST CONTROL IN GSM POWER-AMPLIFIERS

THE time-division-multiple-access (TDMA)-based Global System for Mobil e Communications (GSM) format has emerged as a global standard, Not on ly has it been implemented as the basic cellular and personal-communic ations-services (PCS) standard in Europe, but it has also gained wide acceptance in North America as the PCS-1900 standard, As with other TD MA schemes, the GSM format presents a challenge for RF designers in te rms of implementing transmit burst shaping and power control, One solu tion achieves power control and burst shaping by employing the circuit ry used to produce the required negative-gate bias voltage and drain s witch in gallium-arsenide (GaAs) metal-semiconductor field-effect-tran sistor (MESFET) amplifiers.