Effects of silicon-rich silicon nitride on morphology of LOCOS

Authors
Citation
Y. Osada, Effects of silicon-rich silicon nitride on morphology of LOCOS, ELECTROCH, 69(8), 2001, pp. 608-611
Citations number
7
Categorie Soggetti
Physical Chemistry/Chemical Physics","Chemical Engineering
Journal title
ELECTROCHEMISTRY
ISSN journal
13443542 → ACNP
Volume
69
Issue
8
Year of publication
2001
Pages
608 - 611
Database
ISI
SICI code
1344-3542(200108)69:8<608:EOSSNO>2.0.ZU;2-A
Abstract
The effects of the silicon-rich silicon nitride film on the morphology of L OCOS were investigated. Silicon nitride films were prepared by CVD with vol ume ratios of NH3 to SiH4 of 1.5, 9, 90, and 450. The silicon-rich silicon nitride film is also effective as a mask against field oxidation. The silic on-rich silicon nitride film is tolerant to tensile stress during field oxi dation, and it reduces the length of the bird's beak. These effects of the silicon-rich silicon nitride film on the morphology of LOCOS are due to its higher viscosity than the stoichiometric silicon nitride film.