High-power diode lasers with small vertical beam divergence emitting at 808 nm

Authors
Wenzel, H Bugge, F Erbert, G Hulsewede, R Staske, R Trankle, G
Citation
H. Wenzel et al., High-power diode lasers with small vertical beam divergence emitting at 808 nm, ELECTR LETT, 37(16), 2001, pp. 1024-1026
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
16
Year of publication
2001
Pages
1024 - 1026
Database
ISI
SICI code
0013-5194(20010802)37:16<1024:HDLWSV>2.0.ZU;2-#
Abstract
A new waveguiding scheme for high-power diode lasers based on high-index qu arter-wave reflecting lavers inserted into the cladding layers is presented . For 808 nm lasers, a small vertical far-field angle of 18 degrees a low t hreshold current density of 280 A/cm(2) and a high conversion efficiency of 50% are simultaneously obtained.