Carrier dynamics of quantum well bistable lasers

The influence of carrier capture and transport effects on static and dynami c characteristics of multiple quantum well (MQW) bistable lasers are studie d using the well barrier hole burning and carrier transport models. In the well barrier hole burning model, the ratio of carrier capture to release ti me (eta) is varied and the hysterisis width, transient behavior are analyze d. Furthermore, the effect of carrier transport time on the bistable charac teristics are also studied. The analyses are done by simulating the equival ent circuit of MQW bistable laser using the circuit simulation program Pspi ce. The hysterisis width is found to increase with an increase in eta and t ransport time. In the transient simulation, increased turn on delay is obse rved in the case of a higher value of eta. Larger transport time also resul ts in delayed output response.