EXCITONS IN SEMICONDUCTOR NANOSTRUCTURES WITH DISORDER

Citation
R. Zimmermann et al., EXCITONS IN SEMICONDUCTOR NANOSTRUCTURES WITH DISORDER, Pure and applied chemistry, 69(6), 1997, pp. 1179-1186
Citations number
22
Categorie Soggetti
Chemistry
Journal title
ISSN journal
00334545
Volume
69
Issue
6
Year of publication
1997
Pages
1179 - 1186
Database
ISI
SICI code
0033-4545(1997)69:6<1179:EISNWD>2.0.ZU;2-G
Abstract
Excitons in quantum structures with alloy as well as interface disorde r are treated. The optical properties follow from a solution of the Sc hrodinger equation describing the exciton center-of-mass motion. The a bsorption linewidth is always is smaller than the underlying potential variation (motional narrowing). Using a kinetic approach with acousti c phonon scattering, luminescence lineshapes are calculated showing no n-equilibrium exciton distributions. Spatially resolved spectroscopy a llows to extract information on individual exciton eigenstates.