Oscillatory characteristic temperature of InAs quantum-dot laser

Citation
Ca. Chang et al., Oscillatory characteristic temperature of InAs quantum-dot laser, IEEE PHOTON, 13(9), 2001, pp. 915-917
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
9
Year of publication
2001
Pages
915 - 917
Database
ISI
SICI code
1041-1135(200109)13:9<915:OCTOIQ>2.0.ZU;2-E
Abstract
InAs quantum-dot laser showed continuous-wave lasing up to 323 K. A high T- o of over 1000 K was measured below 130 K. The value of T-o rapidly decline d at higher temperatures, and showed an oscillatory behavior above 250 K. T he oscillatory changes of T-o were accompanied by alternating change in the light output versus current curves above the threshold, suggesting possibl e participation of higher state in lasing.