Continuous-wave operation of a 1.3-mu m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature

Authors
Quochi, F Kilper, DC Cunningham, JE Dinu, M Shah, J
Citation
F. Quochi et al., Continuous-wave operation of a 1.3-mu m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature, IEEE PHOTON, 13(9), 2001, pp. 921-923
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
9
Year of publication
2001
Pages
921 - 923
Database
ISI
SICI code
1041-1135(200109)13:9<921:COOA1M>2.0.ZU;2-U
Abstract
In this letter, we report continuous-wave room temperature operation of a G aAsSb-GaAs quantum-well vertical-cavity surface-emitting laser near 1.3 mum . The device is pumped with 674 nm light and provides 1-QmW total optical o utput at 1280 run with 40% differential quantum efficiency. We describe the spatial, angular, and spectral properties of the laser. This device featur es the record of long wavelength with high output power in the GaAsSb-GaAs system.